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Improved calibration and measurement of the scattering parameters of microwave integrated circuits

✍ Scribed by Pantoja, R.R.; Howes, M.J.; Richardson, J.R.; Pollard, R.D.

Book ID
114552415
Publisher
IEEE
Year
1989
Tongue
English
Weight
548 KB
Volume
37
Category
Article
ISSN
0018-9480

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Semiempirical model for admittance and s
Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications
✍ Sneha Kabra; Harsupreet Kaur; Subhasis Haldar; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 515 KB

## Abstract A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model