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Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

✍ Scribed by Yin, L.-W.; Hwang, Y.; Lee, J.H.; Kolbas, R.M.; Trew, R.J.; Mishra, U.K.

Book ID: 120170989
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 239 KB
Volume: 11
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.63040

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