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Important defect aspects in optoelectronic applications of Si- and SiGe/Si-heterostructures

✍ Scribed by W.M. Chen; I.A. Buyanova; A. Henry; W.-X. Ni; G.V. Hansson; B. Monemar


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
313 KB
Volume
102
Category
Article
ISSN
0169-4332

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The availability of compliant substrates has opened new avenues to exploit SiGe materials for optoelectronic applications. In this paper, relevant issues including fabrication of compliant substrates through compositionally graded buffer layers, strain (stress) balance in active layer design and X-r