Artificial neural network applications i
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Zlatica D. MarinkoviΔ; Olivera ProniΔ-RanΔiΔ; Vera MarkoviΔ
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Article
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2008
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John Wiley and Sons
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English
β 489 KB
## Abstract An application of artificial neural networks (ANNs) for accuracy improving of the microwave FETs (MESFET/HEMT, dualβgate MESFET) noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model, whose noise wave temperatures are assumed to be