Implantation and diffusion of phosphorou
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A. Chroneos; D. Skarlatos; C. Tsamis; A. Christofi; D.S. McPhail; R. Hung
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Article
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2006
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Elsevier Science
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English
β 190 KB
In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5 Γ 10 13 and 10 15 cm Γ2 ) and a range of energies (30, 50 and 150 keV). Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2 ) and an 80