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Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

✍ Scribed by K. Martens; W. Wang; K. De Keersmaecker; G. Borghs; G. Groeseneken; H. Maes


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
888 KB
Volume
84
Category
Article
ISSN
0167-9317

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Effects of beta-ray irradiation on the C
✍ A. Tataroğlu; M.H. Bölükdemir; G. Tanır; Ş. Altındal; M.M. Bülbül 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 228 KB

The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac