Impact of Shear Strain and Quantum Confinement on Channel nMOSFET With High-Stress CESL

✍ Scribed by Takashino, H.; Okagaki, T.; Uchida, T.; Hayashi, T.; Tanizawa, M.; Tsukuda, E.; Eikyu, K.; Wakahara, S.; Ishikawa, K.; Tsuchiya, O.; Inoue, Y.

• Book ID: 114619154
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 489 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2003094