Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory

✍ Scribed by Guy, J.; Molas, G.; Vianello, E.; Carabasse, C.; Blaise, P.; Bernard, M.; Souchier, E.; Francois, P.; Aussenac, F.; Delaye, V.; Clermidy, F.; De Salvo, B.

• Book ID: 124126045
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 850 KB
• Volume: 563
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2014.05.011