Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal–Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)

✍ Scribed by Pati, Sudhansu Kumar; Pardeshi, Hemant; Raj, Godwin; Mohan Kumar, N.; Sarkar, Chandan Kumar

• Book ID: 122607366
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 626 KB
• Volume: 55
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/j.spmi.2012.12.002