Impact of porous SiOCH on propagation pe
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M. Gallitre; B. Blampey; B. Fléchet; A. Farcy; V. Arnal; C. Bermond; T. Lacrevaz
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Article
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2007
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Elsevier Science
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English
⚖ 1005 KB
With the dimensions scaling down at each new technology node, introduction of porous dielectric materials is required to reduce the interconnect capacitance. Nevertheless, these materials are very prone to damage during integration, thus increasing their K-value (2.5 as deposited for the 45 nm node)