✦ LIBER ✦

Impact ionization in semiconductors: recent progress on non-local effects

✍ Scribed by Marsland, John S.

Book ID: 105365315
Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 580 KB
Volume: 206
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200881317

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A model of the ionization pathlength PDF is reformulated with new parameters that have more physical significance and allow further investigation. The transition from the dead space effect to the dead space plus resonance effect is investigated and a new measure, the overshoot factor, is suggested as the method for indicating the degree of resonant behaviour. The non‐local model is extended for non‐uniform electric field profiles. When this extended model is fitted to Monte Carlo data derived for four different electric field profiles, a fairly consistent set of parameters is found. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Effect of diffusion on the velocity of s

Effect of diffusion on the velocity of stationary impact ionization waves in semiconductors

✍ A. S. Kyuregyan 📂 Article 📅 2007 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 223 KB

Effect of Deep Level Impact Ionization o

Effect of Deep Level Impact Ionization on Avalanche Breakdown in Semiconductor p-n Junctions

✍ Kang, Samsoo ;Myles, Charles W. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 148 KB

Use of the strong exclusion effect in io

Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

✍ Aronov, D. A. ;Zaveryukhin, B. N. ;Muminov, R. A. ;Rubinov, V. V. ;Shamagdiev, A 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 280 KB

Correction: Recent Progress on ZnO-Based

Correction: Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

✍ Heiko Frenzel; Alexander Lajn; Holger von Wenckstern; Michael Lorenz; Friedrich 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 709 KB

Effect of impact ionization on the satur

Effect of impact ionization on the saturated drift velocity of charge carriers in semiconductors at high electric field

✍ S.K. Roy; R. Ghosh 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 279 KB

ChemInform Abstract: Recent Progress on

ChemInform Abstract: Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

✍ Heiko Frenzel; Alexander Lajn; Holger von Wenckstern; Michael Lorenz; Friedrich 📂 Article 📅 2011 🏛 John Wiley and Sons ⚖ 18 KB