✍ Scribed by S.M. Vernon; S.P. Tobin; S.J. Wojtczuk; C.J. Keavney; C. Bajgar; M.M. Sanfacon; J.T. Daly; T.M. Dixon
No coin nor oath required. For personal study only.
This paper reports the experimental results from several technical approaches aimed at achieving highly efficient solar cells for terrestrial and space-power applications. Efficiencies of up to 28.7% "(200X, AM1.5) and 24.8% (IX, AM1.5) have been achieved with homoepitaxial GaAs p/n cells. This one-sun AM1.5 efficiency value is believed to be the highest reported to date. Tandem solar cells using GaAs/Ge structures have been fabricated and tested to have efficiencies up to 24.1% (lX, AM1.5), and a GaAs/Si cell at 17.6% (IX, AM1.5) is reported. The use of InP as a radiation-tolerant material for solar cells with high end-of-life efficiency has drawn much interest lately. We report homoepitaxial n/p InP cells with an efficiency of 18.8% (lX, AM0); this is believed to be the best InP cell reported to date. Fabrication of heteroepitaxial InP solar cells, with one-sun AM0 efficiency values of 9.4% (on GaAs) and 7.2% (on silicon) is described. In addition, a new large-scale metal-organic chemical vapor deposition (MOCVD) reactor has been developed; studies involving computer simulation, flow visualization, and deposition experiments are described.
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