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IIIA-8 the effect of structural enhancements on the relative performance of n-p-n and p-n-p heterojunction bipolar transistors

โœ Scribed by Sunderland, D.A.; Dapkus, P.D.


Book ID
114595770
Publisher
IEEE
Year
1986
Tongue
English
Weight
150 KB
Volume
33
Category
Article
ISSN
0018-9383

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Simulation analysis of the DC current ga
โœ Francesco G.Della Corte; Fortunato Pezzimenti ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 134 KB

This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n รพ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energ