IIA-4 mobility measurements in submicron-gate modulation-doped AlxGa1-xAs/GaAs heterojunction FETs

✍ Scribed by Wallis, R.H.; Delescluse, P.; Laviron, M.; Delagebeaudeuf, D.

• Book ID: 114594551
• Publisher: IEEE
• Year: 1983
• Tongue: English
• Weight: 201 KB
• Volume: 30
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1983.21344