✦ LIBER ✦

IIA-3 a double two-dimensional electron gas heterostructure of GaAs-AlGaAs grown by MBE

✍ Scribed by Sasa, S.; Muto, S.; Hiyamizu, S.

Book ID: 114595748
Publisher: IEEE
Year: 1986
Tongue: English
Weight: 287 KB
Volume: 33
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1986.22759

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photoluminescence of two-dimensional ele

Photoluminescence of two-dimensional electron system excited by far-infrared cyclotron resonance in GaAs/AlGaAs double heterostructure

✍ H Nakata; M Saitoh; K Fujii; T Ohyama 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 119 KB

Improvement of two‐dimensional electron

Improvement of two‐dimensional electron gas concentration in selectively doped GaAs/N‐AlGaAs heterostructures by atomic planar doping

✍ Ishikawa, Tomonori; Ogasawara, Kazuto; Nakamura, Tomohiro; Kuroda, Shigeru; Kond 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 706 KB

Preliminary comparison of ballistic elec

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

✍ Jan Vaniš; Jiří Zelinka; Václav Malina; Mohamed Henini; Jiří Pangrác; Karel Meli 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 230 KB

Formation of high mobility two-dimension

Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

✍ Y. Kadoya; H. Noge; H. Kano; H. Sakaki 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 367 KB

Growth and characterization of two-dimen

Growth and characterization of two-dimensional electron gas InGaP/GaAs heterostructures grown by low-pressure metalorganic chemical vapour deposition using tertiarybutylarsine and tertiarybutylphosphine

✍ C. Jagadish; A.A. Allerman; N. Hauser; C.C. Hsu; M. Gal 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Tangential magnetoresistance of two-dime

Tangential magnetoresistance of two-dimensional electron gas at a selectively doped n-GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy

✍ Ohno, H. 📂 Article 📅 1982 🏛 American Institute of Physics 🌐 English ⚖ 405 KB