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Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

✍ Scribed by Y. Kadoya; H. Noge; H. Kano; H. Sakaki


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
367 KB
Volume
127
Category
Article
ISSN
0022-0248

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