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[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - High-density low-power-operating dram device adopting 6F/sup 2/ cell scheme with novel S-RCAT structure on 80nm feature size and beyond

✍ Scribed by Oh, H.J.; Kim, J.Y.; Kim, J.H.; Park, S.G.; Kim, D.H.; Kim, S.E.; Woo, D.S.; Lee, Y.S.; Ha, G.W.; Park, J.M.; Kang, N.J.; Kim, H.J.; Hwang, Y.S.; Kim, B.Y.; Kim, D.I.; Cho, Y.S.; Choi, J.K.; Lee, B.H.; Kim, S.B.; Cho, M.H.; Kim, Y.I.; Choi, J.; Shin, D.W.; Shim, M.S.; Choi, W.T.; Lee, G.P.; Park, Y.J.; Lee, W.S.; Ryu, B.I.

Book ID: 118143333
Publisher: IEEE
Year: 2005
Weight: 803 KB
Volume: 0
Category: Article
ISBN-13: 9780780392038
DOI: 10.1109/essder.2005.1546614

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