[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - A 11.7 GHz 1/8-divider using 43 GHz Si high speed bipolar transistor with photoepitaxially grown ultra-thin base

✍ Scribed by Yamazaki, T.; Namura, I.; Goto, H.; Tahara, A.; Ito, T.

• Book ID: 125500889
• Publisher: IEEE
• Year: 1990
• Weight: 262 KB
• Category: Article
• DOI: 10.1109/IEDM.1990.237168