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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Velocity saturation effect in heterostructure field effect transistors

โœ Scribed by Han, C.J.; Ruden, P.P.; Nohava, T.; Narum, D.; Grider, D.; Newstrom, K.; Joslyn, P.; Shur, M.


Book ID
126729797
Publisher
IEEE
Year
1989
Weight
201 KB
Category
Article

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