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[IEEE International Symposium on VLSI Technology, Systems and Applications - Taipei, Taiwan (17-19 May 1989)] International Symposium on VLSI Technology, Systems and Applications - Degradation of time-dependent dielectric breakdown characteristics of MOS capacitors by silicon surface roughness

✍ Scribed by Nakanishi, T.; Kishii, S.; Ohsawa, A.; Honda, K.

Book ID: 121709338
Publisher: IEEE
Year: 1989
Weight: 265 KB
Category: Article
DOI: 10.1109/vtsa.1989.68587

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