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[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts

โœ Scribed by Bradley, S.T.; Brillson, L.J.; Jeonghyun Hwang, ; Schafe, W.J.


Book ID
118007538
Publisher
IEEE
Year
2003
Weight
88 KB
Volume
0
Category
Article
ISBN-13
9780780381391

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