✦ LIBER ✦

[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Single gate 0.15 μm CMOS devices fabricated using RTCVD in-situ boron doped Si/sub 1-x/Ge/sub x/ gates

✍ Scribed by Li, V.Z.-Q.; Mirabedini, M.R.; Kuehn, R.T.; Wortman, J.J.; Ozturk, M.C.

No coin nor oath required. For personal study only.

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