[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - 70 nm MOSFET with ultra-shallow, abrupt, and super-doped S/D extension implemented by laser thermal process (LTP)

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✍ Xuejue Huang, ; Wen-Chin Lee, ; Charles Kuo, ; Hisamoto, D.; Leland Chang, ; Ked 📂 Article 📅 1999 🏛 IEEE ⚖ 324 KB

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✍ Timp, G.; Bude, J.; Bourdelle, K.K.; Garno, J.; Ghetti, A.; Gossmann, H.; Green, 📂 Article 📅 1999 🏛 IEEE ⚖ 596 KB

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✍ Scholten, A.J.; Tromp, H.J.; Tiemeijer, L.F.; Van Langevelde, R.; Havens, R.J.; 📂 Article 📅 1999 🏛 IEEE ⚖ 321 KB

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✍ Yang-Kyu Choi, ; Asano, K.; Lindert, N.; Subramanian, V.; Tsu-Jae King, ; Bokor, 📂 Article 📅 1999 🏛 IEEE ⚖ 458 KB

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✍ Kozlowski, L.J.; Luo, J.; Tomasini, A. 📂 Article 📅 1999 🏛 IEEE ⚖ 433 KB

[IEEE International Electron Devices Mee

✍ Zolper, J.C. 📂 Article 📅 1999 🏛 IEEE ⚖ 323 KB