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[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

✍ Scribed by Ehwald, K.E.; Knolll, D.; Heinemann, B.; Chang, K.; Kitchgessner, J.; Mauntel, R.; Lim, I.S.; Steele, J.; Schley, P.; Tillack, B.; Wolff, A.; Blum, K.; Winkler, W.; Pierschel, M.; Jagdhold, U.; Barth, R.; Grabolla, T.; Erzgraber, H.J.; Hunger, B.; Osten, H.J.

Book ID: 121464605
Publisher: IEEE
Year: 1999
Weight: 356 KB
Category: Article
ISBN-13: 9780780354104
DOI: 10.1109/IEDM.1999.824216

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