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✦ LIBER ✦

[IEEE International Electron Devices and Materials Symposium - Hsinchu, Taiwan (12-15 July, 1994)] International Electron Devices and Materials Symposium - Robust n/sup +//p/sup +/ dual-gate cmos device fabrication using dopant drive-out technique

✍ Scribed by Yu, D.C.H.; Lee, K.H.; Kornblit, A.; Fu, C.C.; Yan, R.H.; Lin, H.D.

Book ID: 126662851
Publisher: IEEE
Year: 1994
Weight: 295 KB
Category: Article
DOI: 10.1109/EDMS.1994.771212

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