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[IEEE International Electron Devices and Materials Symposium - Hsinchu, Taiwan (12-15 July, 1994)] International Electron Devices and Materials Symposium - Field effect controlled transferred electron device with two negative resistance regions

✍ Scribed by Kuo-Hung Lin, ; Shyang Su,

Book ID: 121359098
Publisher: IEEE
Year: 1994
Weight: 236 KB
Category: Article
DOI: 10.1109/EDMS.1994.863883

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