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[IEEE International Electron Devices and Materials Symposium - Hsinchu, Taiwan (12-15 July, 1994)] International Electron Devices and Materials Symposium - Energy band structure tailoring of InGaAsP/InGaAsP quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

✍ Scribed by Wei Lin, ; Hung-Pin Shiao, ; Chwan-Yang Chang, ; Tian-Tsorng Shi, ; Ching-Ting Lee, ; Yuan-Kuang Tu,

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