[IEEE International Electron Devices and Materials Symposium - Hsinchu, Taiwan (12-15 July, 1994)] International Electron Devices and Materials Symposium - High hole mobility transistor (HHMT) with dual Si/Ge/sub 0.4/Si/sub 0.6/Si wells structure grown by Si MBE

✍ Scribed by Wang, S.J.; Wu, S.L.; Chung, H.D.; Chang, W.; Wang, K.L.

• Book ID: 125455732
• Publisher: IEEE
• Year: 1994
• Weight: 258 KB
• Category: Article
• DOI: 10.1109/edms.1994.771136