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[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Degradation mechanism and reliability improvement of InGaAs/InAlAs/InP HEMTs using new gate metal electrode technology

✍ Scribed by Chou, Y.C.; Grundbacher, R.; Leung, D.; Lai, R.; Kan, Q.; Eng, D.; Liu, P.H.; Block, T.; Oki, A.

Book ID: 126697696
Publisher: IEEE
Year: 2005
Weight: 771 KB
Category: Article
ISBN-13: 9780780388918
DOI: 10.1109/ICIPRM.2005.1517462

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