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[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion

✍ Scribed by Ono, H.; Yanagita, M.; Taniguchi, S.; Suzuki, T.

Book ID: 118143356
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 552 KB
Volume: 0
Category: Article
ISBN-13: 9780780388918
DOI: 10.1109/iciprm.2005.1517527

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