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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - Trade-off between high-side capability and substrate minority carrier injection in deep sub-micron smart power technologies

✍ Scribed by Khemka, V.; Parthasarathy, V.; Zhu, R.; Bose, A.; Roggenbauer, T.

Book ID: 118162496
Publisher: IEEE
Year: 2003
Weight: 272 KB
Volume: 0
Category: Article
ISBN-13: 9780780378766
DOI: 10.1109/ispsd.2003.1225273

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