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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - Novel process techniques for fabricating high density trench MOSFETs with self-aligned N/sup +//P/sup +/ source formed on the trench side wall

✍ Scribed by Il-Yong Park, ; Sang-Gi Kim, ; Jin-Gun Koo, ; Jongdae Kim,

Book ID: 111878495
Publisher: IEEE
Year: 2003
Weight: 372 KB
Edition: 2003
Volume: 0
Category: Article
ISBN-13: 9780780378766
DOI: 10.1109/ispsd.2003.1225256

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