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[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - A physical model including velocity overshoot for drain current of sub-0.15 μm MOSFET's

✍ Scribed by De, V.K.; Agrawal, B.; Meindl, J.D.

Book ID: 120574199
Publisher: IEEE
Year: 1993
Weight: 316 KB
Category: Article
ISBN-13: 9780780314504
DOI: 10.1109/IEDM.1993.347212

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