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[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 μm dual gate CMOS

✍ Scribed by Kuroi, T.; Hamaguchi, T.; Shirahata, M.; Okumura, Y.; Kawasaki, Y.; Inuishi, M.; Tsubouchi, N.

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