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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - SiGe HBTs with cut-off frequency of 350 GHz

✍ Scribed by Rieh, J.-S.; Jagannathan, B.; Chen, H.; Schonenberg, K.T.; Angell, D.; Chinthakindi, A.; Florkey, J.; Golan, F.; Greenberg, D.; Jeng, S.-J.; Khater, M.; Pagette, F.; Schnabel, C.; Smith, P.; Stricker, A.; Vaed, K.; Volant, R.; Ahlgren, D.; Freeman, G.; Stein, K.; Subbanna, S.

Book ID: 125433056
Publisher: IEEE
Year: 2002
Weight: 239 KB
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/iedm.2002.1175952

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