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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Noise performance of a low base resistance 200 GHz SiGe technology

โœ Scribed by Greenberg, D.R.; Jagannathan, B.; Sweeney, S.; Freeman, G.; Ahlgren, D.


Book ID
120250365
Publisher
IEEE
Year
2002
Weight
277 KB
Category
Article
ISBN-13
9780780374621

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