✦ LIBER ✦

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Ka-band 2.3W power AlGaN/GaN heterojunction FET

✍ Scribed by Kasahara, K.; Miyamoto, H.; Ando, Y.; Okamoto, Y.; Nakayama, T.; Kuzuhara, M.

No coin nor oath required. For personal study only.

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