𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Physical compact model for threshold voltage in short-channel double-gate devices

✍ Scribed by Keunwoo Kim, ; Fossum, J.G.; Ching-Te Chuang,

Book ID: 120177785
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 230 KB
Category: Article
ISBN-13: 9780780378261
DOI: 10.1109/SISPAD.2003.1233677

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📜 SIMILAR VOLUMES

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Comparison of numerical quantum device models

✍ Kosina, H.; Nedjalkov, M.; Selberherr, S.; Nedjalkov, M. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 255 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Electrostatic analysis of carbon nanotube arrays

✍ Xinlin Wang, ; Wong, H.S.P.; Oldiges, P.; Miller, R.J. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 483 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Simulation of electronic control in electroosmotic flow channels

✍ Dudar, T.; Mikulchenko, O.; Alum, N.; Mayaram, K. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 711 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Theory and design of field-effect carbon nanotube transistors

✍ Pennington, G.; Goldsman, N. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 283 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - A numerically efficient method for the hydrodynamic density-gradient model

✍ Jin, S.; Park, Y.J.; Min, H.S. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 389 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Scaling laws for the resistivity increase of sub-100 nm interconnects

✍ Steinhoegl, W.; Schindler, G.; Steinlesberger, G.; Traving, M.; Engelhardt, M. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 317 KB