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[IEEE ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Penang, Malaysia (26-28 Nov. 1996)] ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements

✍ Scribed by Goh, Y.H.; Ling, C.H.

Book ID: 126638465
Publisher: IEEE
Year: 1996
Tongue: English
Weight: 361 KB
Category: Article
ISBN-13: 9780780333888
DOI: 10.1109/SMELEC.1996.616444

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