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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Novel high voltage LDMOS on partial SOI with double-sided charge trenches

โœ Scribed by Luo, Xiaorong; Wang, Y G; Lei, T F; Lei, L; Fu, D P; Yao, G L; Qiao, M; Zhang, Bo; Li, Zhaoji


Book ID
121844742
Publisher
IEEE
Year
2011
Weight
498 KB
Category
Article
ISBN
1424484251

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