✦ LIBER ✦

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime

✍ Scribed by Poli, S.; Reggiani, S.; Baccarani, G.; Gnani, E.; Gnudi, A.; Denison, M.; Pendharkar, S.; Wise, R.

No coin nor oath required. For personal study only.

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