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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - 0.25μm, 20V high performance complementary bipolar transistor with dual EPI and oxide-filled deep trench isolation for high frequency DC-DC converters

✍ Scribed by Kwon, T.; Haynie, S.; Sadovnikov, A.; Allard, P.; Strout, J.; Strachan, A.

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