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[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - A 30V EDMOS with Orthogonal Gate Structure Based on a 0.18¿m CMOS Technology

✍ Scribed by Wang, Hao; Xu, H. P. Edward; Ng, Wai Tung; Fukumoto, Kenji; Abe, Ken; Ishikawa, Akira; Imai, Hisaya; Sakai, Kimio; Takasuka, Kaoru

Book ID: 126724755
Publisher: IEEE
Year: 2008
Weight: 610 KB
Category: Article
ISBN: 1424415322
DOI: 10.1109/ISPSD.2008.4538887

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