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[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - 60V Lateral Trench MOSFET in 0.35 ¿m Technology

✍ Scribed by Disney, Don; Chan, Wilson; Lam, Roy; Blattner, Robert; Ma, Steve; Seng, Wesley; Chen, Jun-Wei; Cornell, Michael; Williams, Richard

Book ID: 121360604
Publisher: IEEE
Year: 2008
Weight: 426 KB
Category: Article
ISBN: 1424415322
DOI: 10.1109/ISPSD.2008.4538888

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