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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Impact of the drift region profile on performance and reliability of RF-LDMOS transistors

✍ Scribed by Mai, A.; Rucker, H.; Sorge, R.

No coin nor oath required. For personal study only.

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