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[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Fin-height controlled PVD-TiN gate finFET SRAM for enhancing noise margin

✍ Scribed by Liu, Y. X.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Sakamoto, K.; Matsukawa, T.; Masahara, M.; Kamei, T.; Hayashida, T.; Ogura, A.

Book ID: 121193078
Publisher: IEEE
Year: 2010
Weight: 863 KB
Category: Article
ISBN: 142446658X
DOI: 10.1109/ESSDERC.2010.5618392

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