๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - Negative differential resistance of an intracavity voltage-controlled absorber in a vertical cavity surface emitting laser

โœ Scribed by Stone, R.J.; Hudgings, J.A.; Lim, S.F.; Li, G.S.; Lau, K.Y.; Chang-Hasnain, C.J.


Book ID
126765413
Publisher
IEEE
Year
1998
Weight
199 KB
Category
Article
ISBN-13
9780780342231

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


[IEEE Conference Digest. ISLC 1998 NARA.
โœ Greally, M.G.; Steer, M.J.; Frost, J.E.F.; Woodhead, J.; Roberts, J.S.; Adams, M ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› IEEE ๐ŸŒ English โš– 203 KB

progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices

[IEEE Conference Digest. ISLC 1998 NARA.
โœ Sargent, L.J.; Kuball, H.; Rorison, J.M.; Penty, R.V.; White, I.H.; Heard, P.J.; ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› IEEE ๐ŸŒ English โš– 225 KB

progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices

[IEEE Conference Digest. ISLC 1998 NARA.
โœ Owen, M.; Penty, R.V.; White, I.H.; Poguntke, K.R.; Robertson, M.J. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› IEEE ๐ŸŒ English โš– 157 KB

progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices