progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices
[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - Negative differential resistance of an intracavity voltage-controlled absorber in a vertical cavity surface emitting laser
โ Scribed by Stone, R.J.; Hudgings, J.A.; Lim, S.F.; Li, G.S.; Lau, K.Y.; Chang-Hasnain, C.J.
- Book ID
- 126765413
- Publisher
- IEEE
- Year
- 1998
- Weight
- 199 KB
- Category
- Article
- ISBN-13
- 9780780342231
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices
progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices