progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices
[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - Ultrafast light and gain dynamics of GCSOAs by femtosecond cross-gain modulation
โ Scribed by Dupertuis, M.-A.; Hessler, T.; Pleumeekers, J.L.; Selbmann, P.E.; Deveaud, B.; Dagens, B.; Emery, J.Y.; Renaud, M.
- Book ID
- 126745096
- Publisher
- IEEE
- Year
- 1998
- Weight
- 182 KB
- Category
- Article
- ISBN-13
- 9780780342231
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๐ SIMILAR VOLUMES
progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices
progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices