progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices
✦ LIBER ✦
[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - 40 mW, 100°C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes
✍ Scribed by Shimada, N.; Horiuchi, O.; Gen-Ei, K.; Tanaka, A.; Okada, M.; Watanabe, M.; Itoh, Y.; Okuda, H.; Fukuoka, K.
- Book ID
- 126643005
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 155 KB
- Category
- Article
- ISBN-13
- 9780780342231
No coin nor oath required. For personal study only.
✦ Synopsis
progress In Semiconductor Lasers Is Reported In These Papers. High-power, High-speed, Low-threshold Laser Advances Are Reported. Longitudinal And Lateral Mode Control Techniques Are Described And Analyzed. Carrier Transport And Dynamics Technical Results Are Discussed. The Rapid Expansion Of Devices Continues With New Ones Described.
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