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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs

✍ Scribed by Gartner, M.; Vietzke, D.; Reznik, D.; Stoisiek, M.; Oppermann, K.-G.; Gerlach, W.

Book ID: 126611894
Publisher: IEEE
Year: 1997
Weight: 554 KB
Edition: 1997
Category: Article
ISBN-13: 9780780339934
DOI: 10.1109/ISPSD.1997.601487

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